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2SB1274S

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2SB1274S

TRANS PNP 60V 3A TO220ML

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi 2SB1274S, a PNP Bipolar Junction Transistor (BJT), offers robust performance with a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. This through-hole component, housed in a TO-220ML package, features a transition frequency of 100MHz and a power dissipation rating of 2W. Key specifications include a minimum DC current gain (hFE) of 140 at 500mA and 5V, and a Vce saturation of 1V at 200mA collector current. The collector cutoff current (ICBO) is rated at a maximum of 100µA. This device is suitable for applications in power switching and general-purpose amplification across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 500mA, 5V
Frequency - Transition100MHz
Supplier Device PackageTO-220ML
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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