2SB1216T-E
TRANS PNP 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SB1216T-E is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This component features a 100 V collector-emitter breakdown voltage and a maximum continuous collector current of 4 A. With a transition frequency of 130 MHz and a power dissipation of 1 W, it is suitable for use in industrial automation, power management, and consumer electronics. The transistor exhibits a minimum DC current gain (hFE) of 200 at 500 mA and 5 V, and a Vce saturation of 500 mV at 200 mA and 2 A. It operates at temperatures up to 150°C (TJ) and is supplied in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package, delivered in bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |