2SB1216S-TL-E
TRANS PNP 100V 4A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1216S-TL-E is a PNP bipolar junction transistor designed for demanding applications. This device features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 4A, with a saturation voltage of 500mV at 2A collector current and 200mA base current. Its transition frequency is rated at 130MHz, and it dissipates a maximum of 1W. The transistor is housed in a TO-252-3, DPAK package for surface mounting, with a maximum junction operating temperature of 150°C. The 2SB1216S-TL-E is commonly utilized in industrial power supply, automotive, and consumer electronics sectors. Supplied on tape and reel (TR) in a TP-FA package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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