2SB1216S-H
TRANS PNP 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1216S-H is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component offers a collector-emitter breakdown voltage (Vce) of 100V and a continuous collector current (Ic) capability of up to 4A. It features a transition frequency (fT) of 130MHz and a maximum power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 140 at 500mA and 5V, with a saturation voltage (Vce(sat)) of 500mV at 200mA and 2A. The collector cutoff current (Icbo) is rated at a maximum of 1µA. This device is commonly employed in industrial, automotive, and consumer electronics sectors requiring robust power handling and efficient switching characteristics. The package type is TO-251-3 Short Leads, IPAK, also known as TP.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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