2SB1216S-E
TRANS PNP 100V 4A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SB1216S-E, is designed for robust performance in demanding applications. This through-hole component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 4A. Key specifications include a maximum power dissipation of 1W and a transition frequency of 130MHz. The DC current gain (hFE) is a minimum of 140 at 500mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV for a 200mA base current and 2A collector current. The device exhibits a low collector cutoff current (ICBO) of 1µA. Packaged in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) format for through-hole mounting, this transistor is suitable for use in industrial power switching and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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