2SB1215T-TL-E
TRANS PNP 100V 3A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1215T-TL-E is a PNP bipolar junction transistor designed for surface mount applications. It features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A. With a power dissipation of 1W and a transition frequency of 130MHz, this component is suitable for general-purpose amplification and switching. Key parameters include a minimum DC current gain (hFE) of 200 at 500mA and 5V, and a saturation voltage (Vce Sat) of 500mV at 150mA and 1.5A. The transistor operates at temperatures up to 150°C (TJ) and is supplied in a TP-FA package (TO-252-3, DPAK) on tape and reel. This device finds application in power management and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |