2SB1215T-E
TRANS PNP 100V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1215T-E is a PNP Bipolar Junction Transistor (BJT) designed for power switching and amplifier applications. Featuring a 100V collector-emitter breakdown voltage and a maximum collector current of 3A, this component offers a power dissipation capability of 1W. Its transition frequency is rated at 130MHz, and it exhibits a typical DC current gain (hFE) of 200 at 500mA and 5V. The saturation voltage (Vce) is a maximum of 500mV at 150mA collector current and 1.5A collector current. This through-hole device is supplied in a TO-251-3 Short Leads, IPAK, TO-251AA package. It is commonly utilized in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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