2SB1215S-TL-H
TRANS PNP 100V 3A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1215S-TL-H is a PNP bipolar junction transistor designed for demanding applications. This surface mount component, housed in a TO-252-3 (DPAK) package, offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 3 A. It features a transition frequency of 130 MHz and a maximum power dissipation of 1 W. The DC current gain (hFE) is a minimum of 140 at 500mA and 5V, with a Vce(sat) of 500mV at 150mA and 1.5A. The collector cutoff current (ICBO) is rated at 1 µA. This device is commonly utilized in power management and general-purpose switching applications across various industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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