2SB1215S-E
TRANS PNP 100V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1215S-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component offers a collector-emitter breakdown voltage of 100V and a continuous collector current of up to 3A. It features a maximum power dissipation of 1W and a transition frequency of 130MHz, making it suitable for switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 140 at 500mA and 5V, with a Vce saturation of 500mV at 150mA and 1.5A. The collector cutoff current is a low 1µA (ICBO). The operating junction temperature range extends to 150°C. The TO-251-3 Short Leads, IPAK, TO-251AA package (TP) is supplied in bulk packaging and is commonly found in power management and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |