2SB1205T-TL-E
TRANS PNP 20V 5A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1205T-TL-E is a PNP bipolar junction transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 20V and a continuous collector current capability of up to 5A. With a maximum power dissipation of 1W and a transition frequency of 320MHz, it is suitable for power switching and amplification tasks. The device features a minimum DC current gain (hFE) of 200 at 500mA and 2V, and a Vce(sat) of 500mV at 60mA and 3A. It is housed in a TO-252-3, DPAK package for efficient surface mounting and operates at temperatures up to 150°C. This transistor finds utility in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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