2SB1205T-E
TRANS PNP 20V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SB1205T-E. This through-hole device features a maximum collector current (Ic) of 5A and a collector-emitter breakdown voltage (Vce) of 20V. The transistor offers a transition frequency of 320MHz and a maximum power dissipation of 1W. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 500mA and 2V, and a Vce saturation of 500mV at 60mA and 3A. The collector cutoff current (Icbo) is rated at a maximum of 500nA. The operating junction temperature range is up to 150°C. The package is TO-251-3 Short Leads, IPAK, TO-251AA, supplied in bulk packaging. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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