2SB1205S-TL-E
TRANS PNP 20V 5A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1205S-TL-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector current (Ic) of up to 5 A and a collector-emitter breakdown voltage (Vce) of 20 V. With a transition frequency (fT) of 320 MHz and a maximum power dissipation of 1 W, it is suitable for power switching and amplification circuits. The device features a typical DC current gain (hFE) of 140 at 500 mA and 2 V. Its saturation voltage (Vce(sat)) is a maximum of 500 mV at 60 mA base current and 3 A collector current. The 2SB1205S-TL-E is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package with a TP-FA supplier device package, suitable for surface mounting. It operates at temperatures up to 150°C (TJ) and is provided in tape and reel packaging. This component finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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