2SB1205S-E
TRANS PNP 20V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SB1205S-E. This device offers a collector current (Ic) of up to 5 A and a collector-emitter breakdown voltage (Vce) of 20 V. Featuring a transition frequency (fT) of 320 MHz, it is suitable for applications requiring moderate switching speeds. The DC current gain (hFE) is a minimum of 140 at 500 mA and 2 V. With a maximum power dissipation of 1 W and an operating junction temperature up to 150°C, it is designed for reliability in demanding environments. The transistor is housed in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package for through-hole mounting. This component finds utility in various industrial and consumer electronics, including power supplies and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 320MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |