2SB1204T-TL-E
TRANS PNP 50V 8A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1204T-TL-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 8 A. Its high DC current gain (hFE) of 200 at 500 mA and 2 V, coupled with a transition frequency of 130 MHz, makes it suitable for high-speed switching and amplification circuits. The transistor can handle a maximum power dissipation of 1 W and operates across an extended temperature range up to 150°C. With a Vce saturation voltage of 500 mV at 200 mA and 4 A, it offers efficient power handling. Packaged in a TO-252-3 (DPAK) surface mount configuration, the 2SB1204T-TL-E is commonly utilized in power management, automotive systems, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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