2SB1204T-E
TRANS PNP 50V 8A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi PNP Bipolar Junction Transistor, part number 2SB1204T-E, is designed for demanding applications. It features a maximum collector current of 8 A and a collector-emitter breakdown voltage of 50 V. With a transition frequency of 130 MHz and a maximum power dissipation of 1 W, this transistor is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 200 at 500 mA and 2 V. The Vce saturation is rated at a maximum of 500 mV at 200 mA and 4 A, with a collector cutoff current of 1 µA (ICBO). The device is housed in a TO-251-3 Short Leads, IPAK, TO-251AA package (TP) and supports through-hole mounting. It operates within an extended temperature range of up to 150°C (TJ). This component finds utility in industrial automation, power management, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |