2SB1204S-E
TRANS PNP 50V 8A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SB1204S-E is a PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This through-hole component offers a 50V collector-emitter breakdown voltage and a continuous collector current capability of 8A. It features a transition frequency of 130MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is specified at a minimum of 140 at 500mA collector current and 2V collector-emitter voltage. Saturation voltage at 4A collector current and 200mA base current is a maximum of 500mV. The device operates at temperatures up to 150°C. The package is a TO-251-3 Short Leads, also known as IPAK or TO-251AA. This transistor is commonly utilized in power switching and amplification circuits across various industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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