2SB1203T-TL-H
TRANS PNP 50V 5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2SB1203T-TL-H, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 5A. This device features a transition frequency of 130MHz and a power dissipation capability of 1W. Designed for surface mounting within a SOT-23-3 (TO-236) package, it operates efficiently up to 150°C. Key electrical parameters include a minimum DC current gain (hFE) of 200 at 500mA and 2V, and a saturation voltage (Vce(sat)) of 550mV at 150mA and 3A. The typical application industries for this component include consumer electronics and industrial automation. This part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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