2SB1203T-TL-E
TRANS PNP 50V 5A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1203T-TL-E is a PNP bipolar junction transistor designed for demanding applications. Featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 5A, this device is suitable for power switching and amplification tasks. Its high DC current gain (hFE) of 200 at 500mA and 2V ensures efficient operation across various load conditions. With a transition frequency of 130MHz, it supports moderate-speed switching. The 1W maximum power dissipation and 150°C operating junction temperature rating enable reliable performance in industrial and automotive environments. The transistor is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting, delivered on tape and reel. Key parameters include a Vce(sat) of 550mV at 3A collector current and 150mA base current, and a collector cutoff current (ICBO) of 1µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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