2SB1203T-H-TL-E
TRANS PNP 50V 5A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi PNP Bipolar Junction Transistor, part number 2SB1203T-H-TL-E, is designed for demanding applications. This transistor features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 5A. With a transition frequency (fT) of 130MHz and a power dissipation of 1W, it is suitable for power switching and amplifier circuits. The DC current gain (hFE) is a minimum of 200 at 500mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 550mV for 150mA base current and 3A collector current. This component is supplied in a TP-FA package, a TO-252-3 (DPAK) variant, for surface mounting. It is available on tape and reel. Applications include power management and general-purpose switching in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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