2SB1203T-H
TRANS PNP 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SB1203T-H is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 5A. The transistor offers a minimum DC current gain (hFE) of 200 at 500mA and 2V, with a transition frequency of 130MHz. It has a maximum power dissipation of 1W and an operating junction temperature of 150°C. The Vce saturation is rated at a maximum of 550mV at 150mA collector current and 3A collector current. The 2SB1203T-H is supplied in a TO-251-3 Short Leads, IPAK package. This component is commonly found in industrial automation, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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