2SB1203S-TL-E
TRANS PNP 50V 5A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SB1203S-TL-E is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This device offers a 50V collector-emitter breakdown voltage and a continuous collector current capability of 5A, with a maximum power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 70 at 500mA and 2V, and a transition frequency of 130MHz. It features a low saturation voltage of 550mV at 150mA, 3A. The 2SB1203S-TL-E is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, identified as TP-FA, suitable for surface mounting. This component finds application in automotive, industrial, and consumer electronics. The device operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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