2SB1203S-H
TRANS PNP 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1203S-H is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 5A, making it suitable for power switching and amplification tasks. With a transition frequency of 130MHz and a maximum power dissipation of 1W, it offers robust performance. Typical DC current gain (hFE) is 140 at 500mA and 2V, with a Vce(sat) of 550mV at 150mA and 3A. The transistor operates at temperatures up to 150°C and is housed in a TO-251-3 Short Leads, IPAK package, also known as TO-251AA, supplied in bulk. This device finds application in industrial automation, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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