2SB1203S-E
TRANS PNP 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2SB1203S-E. This through-hole device is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of up to 5 A. It features a maximum power dissipation of 1 W and a transition frequency of 130 MHz. The transistor exhibits a minimum DC current gain (hFE) of 140 at 500 mA and 2 V, with a saturation voltage (Vce(sat)) of 550 mV at 150 mA and 3 A. The collector cutoff current (ICBO) is a maximum of 1 µA. Operating at junction temperatures up to 150°C, this component is supplied in Bulk packaging and utilizes a TO-251-3 Short Leads, IPAK, TO-251AA package. Applications include power switching and amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |