2SB1202T-TL-E
TRANS PNP 50V 3A TPFAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1202T-TL-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 3A, with a power dissipation rating of 1W. It offers a transition frequency (fT) of 150MHz and a minimum DC current gain (hFE) of 200 at 100mA and 2V. The device exhibits a Vce(sat) of 700mV at 100mA and 2A, with a collector cutoff current (Icbo) of 1µA. Packaged in a TO-252-3 (DPAK) surface mount configuration and supplied on tape and reel, this transistor is suitable for use in general-purpose amplification and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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