2SB1202T-E
TRANS PNP 50V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT) 2SB1202T-E. This TO-251AA (IPAK) packaged device offers a 50V collector-emitter breakdown voltage and a 3A continuous collector current. It features a maximum power dissipation of 1W and a transition frequency of 150MHz. Minimum DC current gain (hFE) is 200 at 100mA and 2V, with a Vce(sat) of 700mV at 100mA and 2A. Collector cutoff current (ICBO) is 1µA. This component is commonly utilized in industrial and consumer electronics applications requiring robust switching and amplification capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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