2SB1202S-TL-E
TRANS PNP 50V 3A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SB1202S-TL-E is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 3A. With a transition frequency of 150MHz and a maximum power dissipation of 1W, it is suitable for use in power management circuits and consumer electronics. The device offers a minimum DC current gain (hFE) of 140 at 100mA and 2V. The saturation voltage (Vce Saturation) is a maximum of 700mV at 100mA and 2A. This transistor is supplied in the TP-FA package, identified as TO-252-3, DPAK, and is available on tape and reel for automated assembly. Its operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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