2SB1202S-E
TRANS PNP 50V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor (BJT), part number 2SB1202S-E. This through-hole device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. It features a transition frequency of 150MHz and a maximum power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 140 at 100mA and 2V, with a Vce(sat) of 700mV at 100mA and 2A. Designed for applications requiring robust performance in demanding environments, this component is utilized in various industrial and consumer electronics sectors. The TO-251-3 Short Leads, IPAK, TO-251AA package, supplied in bulk, ensures efficient integration into standard PCB assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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