2SB1201T-TL-E
TRANS PNP 50V 2A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SB1201T-TL-E is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 2A, with a power dissipation of 800mW. The transistor exhibits a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a transition frequency of 150MHz. The saturation voltage (Vce(sat)) is rated at a maximum of 700mV at 50mA and 1A. The 2SB1201T-TL-E is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, often referred to as TP-FA, and is supplied on tape and reel. This device is suitable for use in various industrial and consumer electronics applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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