2SB1201S-E
TRANS PNP 50V 2A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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This onsemi PNP Bipolar Junction Transistor, part number 2SB1201S-E, offers robust performance for demanding applications. It features a maximum collector current (Ic) of 2 A and a collector-emitter breakdown voltage (Vce) of 50 V. The transistor exhibits a minimum DC current gain (hFE) of 140 at 100 mA and 2 V, with a transition frequency of 150 MHz. Power dissipation is rated at 800 mW, and it operates at a junction temperature up to 150°C. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, identified by the supplier device package TP-FA. This component is commonly utilized in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |