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2SB1143T

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2SB1143T

TRANS PNP 50V 4A TO126ML

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number 2SB1143T, is a through-hole component housed in a TO-126ML package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 4A. The 2SB1143T features a transition frequency of 150MHz and a maximum power dissipation of 1.5W. Its DC current gain (hFE) is rated at a minimum of 200 at 100mA and 2V, with a saturation voltage (Vce(sat)) of 700mV at 2A collector current and 100mA base current. The device is suitable for applications in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition150MHz
Supplier Device PackageTO-126ML
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1.5 W

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