2SB1124T-TD-E
TRANS PNP 50V 3A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SB1124T-TD-E, a PNP bipolar junction transistor, offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 3A. This surface mount device, packaged in TO-243AA (PCP), features a transition frequency of 150MHz and a power dissipation of 500mW. Key specifications include a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a saturation voltage (Vce(sat)) of 700mV at 100mA and 2A. The collector cutoff current (ICEO) is rated at 1µA. Operating temperature range extends up to 150°C (TJ). This component is commonly utilized in industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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