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2SB1124S-TD-H

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2SB1124S-TD-H

TRANS PNP 50V 3A PCP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi 2SB1124S-TD-H is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 3A. It features a transition frequency of 150MHz and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 140 at 100mA and 2V. Saturation voltage (Vce Saturation) is specified at 700mV maximum for 100mA base current and 2A collector current. The transistor operates at temperatures up to 150°C (TJ). Packaged in a TO-243AA (PCP) case, this device is supplied in Tape & Reel (TR) packaging. Applications for this transistor are found in automotive, industrial, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 2V
Frequency - Transition150MHz
Supplier Device PackagePCP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW

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