2SB1122T-TD-E
TRANS PNP 50V 1A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi 2SB1122T-TD-E is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a Collector-Emitter Breakdown Voltage (Vceo) of 50V and a continuous Collector Current (Ic) capability of up to 1A. It features a transition frequency (fT) of 150MHz and a maximum power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 100 at 100mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at 500mV maximum for 50mA base current and 500mA collector current. The 2SB1122T-TD-E is supplied in a PCP package, presented on a tape and reel. This transistor is suitable for general-purpose amplification and switching in industrial, automotive, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
MCH6203-TL-E
TRANS NPN 50V 1A 6MCPH
BC560CTA
TRANS PNP 45V 0.1A TO92-3
MJE371G
TRANS PNP 40V 4A TO126
