2SB1121T-TD-E
TRANS PNP 25V 2A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi PNP Bipolar Junction Transistor, part number 2SB1121T-TD-E. This device offers a 25V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 2A. Featuring a transition frequency of 150MHz and a maximum power dissipation of 500mW, it is presented in a surface mount PCP (TO-243AA) package, supplied on tape and reel. Key parameters include a minimum DC current gain (hFE) of 100 at 100mA and 2V, and a Vce saturation of 600mV maximum at 75mA and 1.5A. The collector cutoff current (Icbo) is specified at 100nA maximum. This component finds application in various electronic designs across industries such as industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
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