2SB1121S-TD-E
TRANS PNP 25V 2A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi's 2SB1121S-TD-E is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 25 V. The transition frequency is rated at 150 MHz, with a maximum power dissipation of 500 mW. Key parameters include a minimum DC current gain (hFE) of 100 at 100 mA and 2 V, and a Vce(sat) of 600 mV at 75 mA and 1.5 A. The device operates at temperatures up to 150°C (TJ) and is supplied in a PCP package presented on tape and reel. This transistor is suitable for use in power management and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
MPSA92ZL1G
TRANS PNP 300V 0.5A TO92
MJE371G
TRANS PNP 40V 4A TO126
MMBTA06_D87Z
TRANS NPN 80V 0.5A SOT23-3
