2SA608NG-NPA-AT
TRANS PNP 50V 0.15A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA608NG-NPA-AT is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 150mA. With a maximum power dissipation of 500mW and a transition frequency of 200MHz, it offers robust performance for demanding circuit designs. The DC current gain (hFE) is specified at a minimum of 280 at 1mA collector current and 6V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 300mV at 10mA base current and 100mA collector current. This transistor is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. Operating temperature range extends to 150°C (TJ). Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 1mA, 6V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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