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2SA2186-AN

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2SA2186-AN

TRANS PNP 50V 2A 3NMP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number 2SA2186-AN, offers robust performance for demanding applications. This through-hole device features a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 2A. With a transition frequency (fT) of 420MHz and a maximum power dissipation of 900mW, it is suitable for signal amplification and switching in industrial, automotive, and consumer electronics. Key parameters include a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a Vce(sat) of 430mV at 50mA and 1A. The 3-NMP (SC-71) package is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-71
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic430mV @ 50mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition420MHz
Supplier Device Package3-NMP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max900 mW

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