2SA2169-TL-E
TRANS PNP 50V 10A TP-FAManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA2169-TL-E is a PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This surface-mount device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 10A, making it suitable for power switching and amplification circuits. With a transition frequency of 130MHz and a maximum power dissipation of 950mW, it offers efficient operation. Key parameters include a minimum DC current gain (hFE) of 200 at 1A and 2V, and a saturation voltage (Vce(sat)) of 580mV at 250mA and 5A. The device operates over a temperature range of -55°C to 150°C (TJ) and is supplied in a TO-252-3, DPAK (2 leads + tab), SC-63 package, delivered on tape and reel. It finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 580mV @ 250mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP-FA |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 950 mW |