2SA2169-E
TRANS PNP 50V 10A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA2169-E is a PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 50 V. With a transition frequency (fT) of 130 MHz and a maximum power dissipation of 950 mW, it offers robust performance. The DC current gain (hFE) is a minimum of 200 at 1A and 2V, while saturation voltage (Vce(sat)) is a maximum of 580mV at 250mA and 5A. The collector leakage current (Icbo) is rated at 10µA. This device is suitable for use in industrial and automotive sectors. It is supplied in a TO-251-3 Short Leads, IPAK, TO-251AA (TP) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 580mV @ 250mA, 5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 950 mW |
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