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2SA2126-S-TL-E

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2SA2126-S-TL-E

TRANS PNP 50V 3A TPFA

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi PNP Bipolar Junction Transistor (BJT), part number 2SA2126-S-TL-E, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 3A. This surface mount device, packaged in a TP-FA (TO-252-3, DPAK) configuration, features a transition frequency of 390MHz and a maximum power dissipation of 800mW. With a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a collector saturation voltage of 520mV at 100mA and 2A, it is suitable for applications requiring efficient switching and amplification. The operating junction temperature range extends to 150°C. This component finds use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic520mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition390MHz
Supplier Device PackageTP-FA
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW

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