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2SA2126-H

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2SA2126-H

TRANS PNP 50V 3A TP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2SA2126-H is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of 3A. With a transition frequency (fT) of 390MHz, it is suitable for moderate frequency operations. The device offers a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a Vce(sat) of 520mV at 100mA and 2A. The maximum power dissipation is 800 mW, and it operates at a junction temperature up to 150°C. The 2SA2126-H is packaged in a TO-251-3 Short Leads (IPAK) form factor, designed for through-hole mounting and supplied in bulk packaging. This transistor finds application in industries such as consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic520mV @ 100mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Frequency - Transition390MHz
Supplier Device PackageTP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW

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