2SA2126-E
TRANS PNP 50V 3A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA2126-E is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce(max)) of 50V and a continuous collector current (Ic(max)) of 3A. With a transition frequency (fT) of 390MHz and a power dissipation of 800mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The device features a DC current gain (hFE) of at least 200 at 100mA and 2V. The onsemi 2SA2126-E is supplied in a TO-251-3 Short Leads, IPAK package, also known as TO-251AA or TP, for through-hole mounting. Key electrical parameters include a Vce(sat) of 520mV at 100mA and 2A, and a collector cutoff current (Icbo) of 1µA. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 520mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Frequency - Transition | 390MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
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