2SA2112-AN
TRANS PNP 50V 3A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA2112-AN is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of up to 3A. The device offers a minimum DC current gain (hFE) of 200 at 100mA collector current and 10V collector-emitter voltage, with a transition frequency (fT) of 390MHz. Maximum power dissipation is rated at 1W, and it has a saturation voltage (Vce(sat)) of 700mV at 100mA base current and 2A collector current. The 2SA2112-AN is provided in a 3-NMP (SC-71) package suitable for through-hole mounting and supplied on tape and reel. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 10V |
| Frequency - Transition | 390MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |