2SA2039-E
TRANS PNP 50V 5A TPManufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi 2SA2039-E is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a maximum continuous collector current (Ic) of 5A, making it suitable for power switching and amplification tasks. With a transition frequency (fT) of 360MHz, it supports moderate-frequency operations. The device exhibits a minimum DC current gain (hFE) of 200 at 500mA and 2V. Power dissipation is rated at 800mW, and it operates within a temperature range of -55°C to 150°C. The 2SA2039-E is housed in a TO-251-3 Short Leads, IPAK package, also known as TO-251AA, facilitating through-hole mounting. This device is commonly found in industrial automation and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 430mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |