2SA2012-TD-E
TRANS PNP 30V 5A PCPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA2012-TD-E is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component boasts a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 5A, with a power dissipation of 3.5W. The transistor exhibits a minimum DC current gain (hFE) of 200 at 500mA collector current and 2V collector-emitter voltage. Its transition frequency reaches 420MHz, making it suitable for various electronic circuits. The device is supplied in a PCP package, Tape & Reel (TR) for automated assembly, and operates within a junction temperature range of 150°C. Applications include power switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 420MHz |
| Supplier Device Package | PCP |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 3.5 W |