2SA1962RTU
TRANS PNP 250V 17A TO3PManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1962RTU is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 250V collector-emitter breakdown voltage and a maximum collector current of 17A, with a power dissipation capability of 130W. The datasheet specifies a minimum DC current gain (hFE) of 55 at 1A collector current and 5V collector-emitter voltage, and a transition frequency of 30MHz. It exhibits a Vce(sat) of 3V at 800mA base current and 8A collector current. The device is housed in a TO-3P package and is supplied in tubes. This transistor is suitable for use in power supply circuits, audio amplifiers, and general-purpose high-power switching applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | TO-3P |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 130 W |
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