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2SA1943RTU

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2SA1943RTU

TRANS PNP 250V 17A TO264-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi 2SA1943RTU is a PNP bipolar junction transistor (BJT) designed for high-power applications. This device features a maximum collector current (Ic) of 17 A and a collector-emitter breakdown voltage (Vce) of 250 V. With a transition frequency (fT) of 30 MHz and a maximum power dissipation of 150 W, it is suitable for demanding power supply and amplifier designs. The DC current gain (hFE) is a minimum of 55 at 1 A and 5 V. The transistor is housed in a TO-264-3 package, a through-hole mounting type, and operates across a temperature range of -50°C to 150°C. Applications include power amplification and switching circuits within industrial automation and audio systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce55 @ 1A, 5V
Frequency - Transition30MHz
Supplier Device PackageTO-264-3
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max150 W

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