2SA1770T-AN
TRANS PNP 160V 1.5A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's 2SA1770T-AN is a PNP bipolar junction transistor designed for demanding applications. This component offers a robust collector-emitter breakdown voltage of 160V and a continuous collector current capability of 1.5A. The transistor exhibits a minimum DC current gain (hFE) of 200 at 100mA and 5V, with a saturation voltage (Vce Sat) of 500mV at 50mA collector current and 500mA base current. Its transition frequency reaches 120MHz, making it suitable for various signal amplification and switching circuits. The device is rated for a maximum power dissipation of 1W and an operating junction temperature of 150°C. The 2SA1770T-AN is provided in a 3-NMP (SC-71) package, supplied on tape and reel. This transistor finds application in areas such as power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
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