2SA1768S-AN
TRANS PNP 160V 0.7A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi 2SA1768S-AN is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This component offers a collector-emitter breakdown voltage of 160V and a continuous collector current handling capability of up to 700mA. With a transition frequency of 120MHz and a maximum power dissipation of 1W, it is suitable for use in various industrial and consumer electronics, including power supplies, motor control circuits, and audio amplifiers. The device features a DC current gain (hFE) of at least 100 at 100mA and 5V, and a collector-emitter saturation voltage of 500mV at 25mA base current and 250mA collector current. Supplied in a 3-NMP (SC-71) package on tape and reel, the 2SA1768S-AN is designed for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 25mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1 W |
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