2SA1709T-AN
TRANS PNP 100V 2A 3NMPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi 2SA1709T-AN is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 2 A. The transistor exhibits a minimum DC current gain (hFE) of 200 at 100 mA and 10 V, with a transition frequency of 120 MHz. Power dissipation is rated at 1 W. The saturation voltage (Vce(sat)) is a maximum of 600 mV at 100 mA base current and 1 A collector current. The collector cutoff current (ICBO) is specified at 100 nA. This device is housed in a 3-NMP (SC-71) package, supplied on tape and reel, and supports through-hole mounting. The operating junction temperature range extends to 150°C. Typical applications include power supply circuits, audio amplifiers, and control systems in consumer electronics and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-71 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | 3-NMP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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